激光照射对IDTBT突触晶体管突触权重的调控

Regulation of Synaptic Weight of IDTBT-Based Synaptic Transistor via Laser Irradiation

人工突触晶体管具有低功耗、高可扩展性以及与生物突触的结构相似性,在人工智能领域展示出巨大的潜力。实现多功能突触晶体管的关键步骤之一是实现突触权重的调控。制备工艺复杂、调控方式繁琐和调节精度低是突触权重调控面临的主要问题。制备了基于茚并二噻吩共苯并噻二唑(IDTBT)的有机突触晶体管,在绝缘层薄膜溅射完成后,利用激光对绝缘层薄膜进行照射处理。探究了不同激光照射强度对突触权重调控的影响,包括兴奋性突触后电流(EPSC)、双脉冲易化(PPF)和长程增强(LTP),证明了激光照射可以调控绝缘层薄膜中氧空位的数量,从而精确调节突触权重。在不改变器件几何结构和材料的前提下,实现了室温环境下快速、精确的突触晶体管突触权重调控,为未来的神经形态计算硬件设计提供参考。

Due to the low power consumption,high scalability and structural similarity with biological synapses,artificial synaptic transistors have shown great potential in artificial intelligence.One of the key steps in achieving multifunctional synaptic transistors is regulating the synaptic weight.However,complex manufacturing process,complicated regulation method and low adjustment accuracy are the main problems in adjusting synaptic weight.Indacenodithiophene-co-benzothiadiazole(IDTBT)-based organic synaptic transistor was fabricated.After sputtering,the insulating film was irradiated by laser.The effects of different laser intensities on synaptic weight regulation,including excitatory post-synaptic current(EPSC),paired-pulse facilitation(PPF)and long-term potentiation(LTP)were investigated.It is proved that laser irradiation can regulate the number of oxygen vacancies in the insulating film,so as to precisely adjust the synaptic weight.The synaptic weight of synaptic transistors is rapidly and precisely regulated at room temperature without changing the geometry and materials of the device,which provides reference for future hardware design of neuromorphic computing.