压接型IGBT器件升温曲线测量方法

Measurement Method of Heating Curve of Press Pack IGBTs

利用热网络模型和有限元仿真分析了压接型IGBT器件升降温曲线不具有等效性的原因,研究了压接型IGBT器件升温曲线的测量方法,对比了大电流通态压降(V_(CE))法和大电流阈值电压(V_(GE,th))法的测量原理,对压接型器件的适用性和测量准确度等。仿真结果表明,接触热阻在升温和降温阶段受压力的影响出现了不同的变化趋势,导致了升降温曲线的非等效性。实验结果表明,大电流V_(GE,th)法有效降低了压力对测量带来的影响,测量更为准确,测量误差基本在1 K以内,低于大电流V_(CE)法,为压接型IGBT器件进一步的多物理场耦合研究和老化监测提供了参考。此外,实验结果还表明压接型IGBT器件在升降温过程中,压力变化越大,升降温曲线的差异越明显。

The reason why the heating curve and cooling curve of press pack IGBTs were not equi-valent was analyzed by thermal network model and finite element simulation.The measurement methods of heating curve of press pack IGBTs were studied.The measurement principle,applicability and measurement accuracy of on-state voltage drop(V_(CE))at high current method and threshold voltage(V_(GE,th))at high current method for press pack IGBTs were compared.The simulation results show that the heating curve and cooling curve of press pack IGBTs are not equivalent because the contact thermal resistance affected by pressure has different changing trends during the heating and cooling processes.The experiment results show that the V_(GE,th)at high current method effectively reduces the impact of pressure on measurement,so it is more accurate with a measurement error of basically within 1 K,which is lower than V_(CE)at high current method.It provides reference for further multiphysics coupling research and aging monitoring of press pack IGBTs.In addition,the experiment results also show that during the heating and cooling processes of press back IGBTs,the greater the pressure change,the more obvious the difference between the heating and cooling curves.