6~27 GHz GaAs宽带功率放大器MMIC

6-27 GHz GaAs Broadband Power Amplifier MMIC

基于90 nm GaAs赝配高电子迁移率晶体管(PHEMT)工艺研制了一款6~27 GHz宽带功率放大器单片微波集成电路(MMIC)。采用预匹配电路降低带内低频段的增益,将宽带电路设计简化为窄带电路设计。采用滤波器匹配网络,将GaAs PHEMT的栅极等效电容和漏极等效电容加入匹配电路中,缩小了宽带功率放大器MMIC的尺寸。在片测试结果表明,该放大器MMIC在6~27 GHz内,增益大于23 dB,增益平坦度约为±0.8 dB,饱和输出功率大于20.9 dBm。放大器MMIC的工作电压为4 V,电流为125 mA,芯片尺寸为1.69 mm×0.96 mm。该宽带功率放大器MMIC有利于降低宽带系统的复杂度和成本。

Based on 90 nm GaAs pseudomorphic high electron mobility transistor(PHEMT) technology, a 6-27 GHz broadband power amplifier monolithic microwave integrated circuit(MMIC) was developed.The pre-matching circuit was used to reduce the gain of the low frequency band, so that the design of the wide band circuit was simplified to a narrowband circuit design.Using the filter matching network, the gate equivalent capacitance and the drain equivalent capacitance of the GaAs PHEMT were added into the matching circuit, reducing the size of the broadband power amplifier MMIC.The results of on-chip test show that the gain of the amplifier MMIC is more than 23 dB,the saturation output power is above 20.9 dBm, and the gain flatness is about ±0.8 dB in the frequency range of 6-27 GHz.The amplifer MMIC operates at 4 V with 125 mA current.The chip size is 1.69 mm × 0.96 mm.This broadband amplifier MMIC is beneficial to reducing the complexity and cost of the broadband system.