界面层对CIGS薄膜太阳电池电性能影响的数值模拟研究

RESEARCH ON NUMERICAL SIMULATION OF INFLUENCE OF INTERMEDIATE LAYER ON ELECTRICAL PERFORMANCE OF CIGS THIN FILM SOLAR CELLS

通过在铜铟镓硒(CIGS)薄膜太阳电池中分别插入RbInSe_(2)薄膜和MoSe_(2)薄膜作为界面层,设计出新的电池结构,然后使用模拟软件wxAMPS研究了界面层对CIGS薄膜太阳电池电性能的影响。研究结果表明:RbInSe_(2)薄膜对CIGS薄膜太阳电池电性能的提高效果不明显,且随着RbInSe_(2)薄膜厚度的增加,电池电性能呈先升高后降低的趋势。MoSe_(2)薄膜对CIGS薄膜太阳电池的电性能有显著的提高作用,主要原因是该薄膜与CIGS薄膜构成的异质结在电池内部附加了一个电场。该电场能够将向MoSe_(2)薄膜运动的电子“反射”回CIGS薄膜中,降低载流子的界面复合速度,进而提高光生电流。以分析获得的最优参数进行数值模拟,同时插入MoSe_(2)薄膜和RbInSe_(2)薄膜的CIGS薄膜太阳电池的最高光电转换效率可达25.0%,这为实验室及实际生产制备出高效CIGS薄膜太阳电池提供了一条可能的技术路径。

In this paper,RbInSe2 thin film and MoSe2 thin film are inserted into CIGS thin film solar cell as the intermediate layer respectively,and a new cell structure is designed.Then the effect of the intermediate layer on the electrical performance of CIGS thin film solar cell is studied using the simulation software wxAMPS.The results show that the improvement effect of RbInSe2 thin film on the electrical performance of CIGS thin film solar cells is not obvious,and with the increase of the thickness of RbInSe_(2) thin film,the electrical performance of the cells first increases and then decreases.MoSe_(2) thin film can significantly improve the electrical performance of CIGS thin film solar cells.The main reason is that the heterojunction formed by this thin film and CIGS thin film adds an electric field inside the cells.The electric field can“reflect”the electrons moving towards the MoSe_(2) thin film back into the CIGS thin film,reduce the interface recombination speed of the carriers,and then increase the photogenerated current.The maximum photoelectric conversion efficiency of CIGS thin film solar cells inserted with both MoSe_(2) thin film and RbInSe_(2) thin film can reach 25.0%by numerical simulation with the optimal parameters obtained from the analysis,which provides a possible technical path for the preparation of efficient CIGS thin film solar cells in the laboratory and practical production.