摘要
全控型绝缘栅双极晶体管(insulated gated bipolar transistor, IGBT)模块作为模块化多电平换流器(modular multilevel converter, MMC)的核心功率器件,其失效机理研究和状态监测技术对保证MMC的运行可靠性具有重要意义。IGBT模块劣化引起的运行参数失真和内部结构异常将严重影响MMC的工作性能。目前IGBT模块状态监测综述较多,但缺乏对MMC中IGBT模块状态监测的相关总结。首先分析了MMC的结构特性与工作原理。然后根据焊接式和压接式两种类型IGBT的失效机理,总结了IGBT模块的状态监测技术,并补充了MMC子模块中IGBT模块的状态监测方法并进行分析。最后针对目前研究中存在的不足,结合当下的研究现状,展望了未来柔性直流输电系统中IGBT模块状态监测与评估的研究方向。
As the core power device of a modular multilevel converter(MMC), the failure mechanism study and condition monitoring technology of insulated gated bipolar transistor(IGBT) modules is of great significance in ensuring operational reliability. Distortion of operating parameters and internal structural abnormalities caused by IGBT module deterioration will seriously affect the working performance of an modular multilevel converter(MMC). At present, there are many reviews of IGBT modules status monitoring, but there is a lack of relevant summaries of IGBT module status monitoring in an MMC. First, the structural characteristics and working principle of an MMC are analyzed. Then, according to the failure mechanism of power-module and press-pack type IGBT, the state monitoring technology of the IGBT modules is summarized, and the state monitoring method of the IGBT modules in the MMC sub-module is supplemented and analyzed. Finally, in view of the shortcomings in current research, combined with the current research status, the research direction is suggested for IGBT module condition monitoring and evaluation in a flexible HVDC transmission system.
作者
阳同光
沈兵
YANG Tongguang;SHEN Bing(School of Mechanical and Electrical Engineering,Hunan City University,Yiyang 413000,China;Hunan Provincial Key Laboratory of Smart City Energy Perception and Edge Computing,Yiyang 413000,China;School of Electrical Engineering,University of South China,Hengyang 421200,China)
出处
《电力系统保护与控制》
EI
CSCD
北大核心
2023年第4期174-187,共14页
Power System Protection and Control
基金
湖南省科技厅重点研发计划项目资助(2021GK2020)
湖南省自然科学基金项目资助(2021JJ30079)。
