金属氧化物基阻变存储器的研究进展

Recent Progress of Metal Oxide RRAM

随着集成电路技术的发展,半导体器件尺寸也逐渐趋于摩尔定律的极限。当前主流的非挥发性存储器件已经无法满足信息科技对于超高密度快速存储的需求。阻变存储器(RRAM)因其结构简单、工作速度快、可缩小性强且与CMOS工艺兼容等优点,被认为是下一代非易失性存储器的新星。氧化物基阻变存储器因其优异的器件性能和稳定性,在信息存储和类脑神经计算领域具有重要的应用价值。本文从阻变存储器存储机理、材料种类、器件结构和器件性能等方面系统地概述了氧化物基阻变存储器的研究进展,为氧化物基阻变存储器的发展提供新思路。

With the development of integrated circuit technology, the size of semiconductor devices has gradually approached the limit of Moore’s law. The current mainstream nonvolatile memory devices have been unable to satisfy the demand of information technology for ultrahigh density fast storage. Resistive random-access memory(RRAM) is considered to be the new star for the next generation of nonvolatile memory due to its simple structure, fast working speed,strong miniaturization, and compatibility with the CMOS process. Metal oxide-based RRAM has important applications in information storage and brain-inspired computing owing to its excellent performance and stability. In this paper, the recent progress of oxide-based resistive memory is systematically summarized in terms of materials, electrode materials, memory mechanism, and device performance, which provides a new idea for the development of oxide-based resistive memory.