利用山形空穴存储层结构对深紫外激光二极管的性能优化

Performance optimization of deep-ultraviolet laser diodes using mountain-shaped hole reservoir layer structure

为了有效提高深紫外激光二极管的空穴注入效率和减少电子泄露,优化其性能,设计出了在基础矩形空穴存储层结构上改进后的山形空穴存储层和倒山形空穴存储层.使用Crosslight软件模拟仿真倒山形和山形空穴存储层结构的电子浓度、电子电流密度、能带图以及P-I特性曲线.结果显示山形空穴存储层激光器的光学和电学性能优于矩形和倒山形激光器,因此山形空穴存储层激光器能有效地增加有源区空穴注入和减少电子泄露,提高有源区载流子浓度和辐射复合速率,实现了激光器优越的光电性能.

In order to effectively improve the hole injection efficiency and reduce electron leakage of deep ultraviolet laser diode and optimize its performance,mountain shaped hole reservoir layer and inverted-mountain shaped hole reservoir layer,which are improved on the basic rectangular hole reservoir layer structure,are designed.The electron concentration,electron current densities,energy band diagrams and P-I characteristic curves of the inverted-mountain shaped and mountain shaped hole reservoir layer structures were simulated using Crosslight software.The results show that the optical and electrical properties of the mountain shaped hole reservoir layer(HRL)laser are better than those of the rectangular and inverted-mountain shaped lasers,and thus the mountain shaped HRL laser is effective in increasing hole injection and reducing electron leakage in the active region,Increasing the carrier concentration and radiation recombination rate in the active region can achieve superior optoelectronic performance of the laser.