摘要
针对光伏并网逆变器中的串扰问题,提出一种考虑寄生电感影响的非开尔文封装SiC MOSFET串扰峰值预测算法。以TO-247-3封装SiC MOSFET构成的半桥电路为研究对象,首先分析各个阶段的串扰电压数学模型,并推导串扰电压的微分表达式;其次提出串扰峰值的预测算法,建立预测峰值所需参数的数学模型;最后搭建实验平台,验证理论的正确性和算法的有效性,为设计光伏并网逆变器的驱动和保护电路提供参考依据。
Aiming at the crosstalk problem in photovoltaic grid-connected inverter,a crosstalk peak prediction algorithm for non-Kelvin packaged SiC MOSFET considering the effect of parasitic inductance is proposed.The half-bridge circuit composed of To-247-3 package SiC MOSFET is studied.Firstly,the mathematical model of crosstalk voltages in each stage are analyzed,and the differential expressions of crosstalk voltage are derived;Secondly,the prediction algorithm of crosstalk peak is proposed,and the mathematical models of the parameters required to predict the crosstalk peak are established;Finally,an experimental platform is built to verify the correctness of the theory and the effectiveness of the algorithm.
作者
杜明星
边维国
欧阳紫威
Du Mingxing;Bian Weiguo;Ouyang Ziwei(Tianjin Key Laboratory of Control Theory&Applications in Complicated System,Tianjin University of Technology,Tianjin 300384,China;Department of Electrical Engineering,Technical University of Denmark,Lyngby 2800 Kgs,Denmark)
出处
《太阳能学报》
EI
CAS
CSCD
北大核心
2023年第1期16-23,共8页
Acta Energiae Solaris Sinica
基金
天津市技术创新引导专项基金(20YDTPJC00510)。
关键词
碳化硅
MOSFET
串扰
并网逆变器
寄生电感
半桥电路
silicon carbide
MOSFET
crosstalk
grid-connected inverter
parasitic inductance
half-bridge circuit
