CZTS光阴极性能提升研究进展

Research progress on performance improvement of CZTS photocathode

Cu_(2)ZnSnS_(4)(CZTS)禁带宽度为1.5eV,是一种较宽光响应范围P型半导体,其理论光电流密度可达25 mA·cm^(-2),理论太阳能转氢能效率(STH)为32.2%,是一类重要的光电催化水分解制氢材料。然而,CZTS光阴极自身仍然存在较高的载流子复合几率和较低的表面反应速率等缺点,因此目前已报道的最高STH仅为12.6%。针对此问题,综述了近些年对CZTS的相关研究及改性方法,并对其未来发展进行展望。

Cu_(2)ZnSnS_(4)(CZTS),with a forbidden band width of 1.5 eV,is a wide photoresponse range P-type semiconductor with a theoretical photocurrent density of 25 mA·cm^(-2) and a theoretical solar-to-hydrogen energy efficiency(STH) of 32.2%,making it an important class of photocatalytic hydrogen production materials.However, the CZTS photocathode itself still suffers from the disadvantages of high carrier complexation rate and low surface reaction rate, so the highest STH reported so far is only 12.6%.To address this issue, the relevant researches and modification methods of CZTS in recent years are reviewed, and their future development is prospected.