氮对MPCVD单晶金刚石生长与含量研究进展

Research progress on the effect of nitrogen on the growth and content of MPCVD single crystal diamond

微波等离子体化学气相沉积(MPCVD)技术被认为是制备高纯单晶金刚石的首选方法。然而因为氮原子的半径与碳的原子半径相近,容易成为单晶金刚石生长层中的主要杂质,是阻碍MPCVD单晶金刚石推广应用的原因之一。经过国内外研究团队的对氮与MPCVD单晶金刚石的生长与氮杂质含量控制研究取得了一些结果。但是除此之外还需要解决氮掺杂提速与控制单晶金刚石生长层中氮杂质含量的控制统一问题,才能实现MPCVD单晶金刚石的高端领域应用。

Microwave plasma chemical vapor deposition(MPCVD)is considered as the preferred method for the preparation of high-purity single-crystal diamond.However,because the radius of nitrogen atom is similar to that of carbon,it tends to be the main impurity in the growth layer of single crystal diamond,which is one of the major reasons to hinder the popularization of MPCVD single crystal diamond.Some study results have been obtained by research teams atour country and abroad for the growth of nitrogen and MPCVD single crystal diamond in the controlling of nitrogen impurity content.However,in addition,it is also necessary to solve the problem of unified controlling effect of nitrogen doping speed and nitrogen impurity content in the growth layer of single crystal diamond,so as to realize the high-end application of MPCVD single crystal diamond.