摘要
Flexible photodetectors(PDs)are indispensable components for next-generation wearable electronics.Recently,two-dimensional(2D)materials have been implemented as functional flexible optoelectronic devices due to their characteristics of atomically thin layers,excellent flexibility,and strain sensitivity.In this work,we developed a flexible photodetector based on MoS_(2)/NiO heterojunction,and Fabry-Perot(F-P)and piezo-phototronic effect have been employed to enhance the responsivity(R)and external quantum efficiency(EQE)of the devices.The F-P effect is utilized to improve the optical absorption of the MoS_(2),resulting in an enhancement in the photoluminescence(PL)of monolayer MoS_(2) and the EQE of the photodetector by 30 and 130 times,respectively.The flexible photodetector exhibits an ultrahigh detectivity(D*)of 2.6×10^(14) Jones,which is the highest value ever reported for flexible MoS_(2) PDs.The piezo-potential of monolayer MoS_(2) decreases the valence band offset at the interface of MoS_(2)/NiO,which increases the transfer efficiency of the photon-generated carriers significantly.Under 1.17%tensile strain,the R of the flexible photodetector can be enhanced by 271%.This research may provide a universal strategy for the design and performance optimization of 2D materials heterostructures for flexible optoelectronics.
基金
The authors thank for the support of the National Natural Science Foundation of China(Nos.11674290,U1704138,61804136,U1804155,and 11974317)
Henan Science Fund for Distinguished Young Scholars(No.212300410020)
Key Project of Henan Higher Education(No.21A140001)
the Zhengzhou University Physics Discipline Improvement Program,and China Postdoctoral Science Foundation(Nos.2018M630829 and 2019T120630).