石墨烯p-n结应力调控的谷分离和反常Klein隧穿研究

Strain-modulated Valley Splitting and Anomalous Klein Tunneling in Graphene-based p-n Junction

为了研究基于石墨烯的谷分离器和反常电子输运性质,采用波函数衔接方法设计了一款基于石墨烯p-n结应力调控的谷分离器,并提出发生反常Klein隧穿的物理机制。结果表明:应力使得石墨烯的能带结构具有各向异性,导致谷分离的产生;当电子的入射角为非零时,电子可以无视势垒的长度和宽度而完美地穿过石墨烯p-n结,即反常Klein隧穿,这打破了Klein隧穿发生在电子零角度入射的常规认识。

In order to study graphene-based valley separator and anomalous electron transport properties,a valley separator based on graphene p-n junction strain modulation was designed and the physical mechanism of anomalous Klein tunneling was proposed by using the wave function linking method.The results showed that the anisotropic band structure of graphene was obtained by strain,which led to the behavior of valley splitting.When the incident angle of the electron was non-zero,the electron could pass through the graphene-based p-n junction perfectly regardless of the length and width of the barrier,that is,anomalous Klein tunneling,which broke up the conventional knowledge that the Klein tunneling occurred at the zero incident angle.