硒化温度对Sb_(2)(S,Se)_(3)薄膜性能影响的研究

Effect of Selenization Temperature on the Properties of Sb_(2)(S,Se)_(3)Thin Films

为了探索环保低成本的薄膜太阳电池吸收层材料的制备工艺,以水为前驱体溶剂,采用喷雾热解法制备Sb_(2)(S,Se)_(3)薄膜,研究硒化温度对薄膜的物相结构、微观形貌、光学性能和光电化学性能的影响。结果表明随着硒化温度的升高,薄膜的结晶度提高,Sb_(2)(S,Se)_(3)的带隙值从1.74 eV降低到1.56 eV。硒化温度300℃时的薄膜较其他硒化温度下的薄膜具有更强的光电流响应。

In order to explore the environment-friendly and low-cost preparation process of thin film solar cell absorbing layer materials,Sb_(2)(S,Se)_(3)thin films were prepared by spray pyrolysis method with water as the precursor solvent.The effects of selenization temperature on the phase structure,micro-morphology,optical properties and photoelectrochemical properties of the films were studied.The results showed that the crystallinity of the film was better and the band gap value of Sb_(2)(S,Se)_(3)decreased from 1.74 eV to 1.56 eV with the increase of selenide temperature.The samples at selenide temperature of 300℃had stronger photocurrent response than those with other selenide temperatures.