摘要
功率器件应用于航空航天等领域,可以起到功率转换、开关控制等作用。以GaN为代表的宽禁带半导体材料器件已逐渐地成为新型功率器件的不二选择。介绍了一款p型GaN栅的100 V GaN HEMT功率器件,给出了该器件各项参数的仿真情况、常态测试参数和三温实验数据,并给出了仿真结果与器件实测结果的对比情况。相较于25℃,在125℃环境温度下,器件阈值电压漂移-0.1 V;在-55℃环境温度下,阈值电压漂移+0.1 V;在-55~125℃全温范围内,器件击穿电压没有明显的变化,均为108 V。说明该GaN HEMT器件有较强的全温范围适应能力。
Power devices are applied in aerospace and aeronautics fields for power conversion and switch control.Wide-band gap semiconductor by GaN has gradually become the best choice for new power devices.A 100 V GaN HEMT power device with P-GaN grid is introduced.The simulation of parameters,room temperature test results and all-temperature experi-mental results of the device are given.In addition,the comparison between the simulation results and experiment results of the device are compared and analyzed.Compared with the test result at 25℃,the threshold voltage drift of the device at 125℃is-0.1 V,and at-55℃,the threshold voltage drift is 0.1 V.In the full text range of-55~125℃,the breakdown voltage of the device has no obvious change,all are 108 V.The results indicate that the GaN HEMT has out-standing adaptation ability to temperature.
作者
蒲阳
吴昊
PU Yang;WU Hao(Science and Technology on Analog Integrated Circuit Laboratory,Chongqing 400060,China)
出处
《电子产品可靠性与环境试验》
2023年第1期26-30,共5页
Electronic Product Reliability and Environmental Testing
基金
模拟集成电路国家级重点实验室基金项目--高压Si/GaN级联器件设计及抗辐射加固技术(2021-JCJQ-LB-049-5)资助。
