摘要
A power amplifier’s linearity determines the emission signal’s quality and the efficiency of the system.Nonlinear distortion can result in system bit error,out-of-band radiation,and interference with other channels,which severely influence communication system’s quality and reliability.Starting from the third-order intermodulation point of the milimeter wave(mm-Wave)power amplifiers,the circuit’s nonlinearity is compensated for.The analysis,design,and implementation of linear class AB mm-Wave power amplifiers based on GlobalFoundries 45 nm CMOS silicon-on-insulator(SOI)technology are presented.Three single-ended and differential stacked power amplifiers have been implemented based on cascode cells and triple cascode cells operating in U-band frequencies.According to nonlinear analysis and on-wafer measurements,designs based on triple cascode cells outperform those based on cascode cells.Using single-ended measurements,the differential power amplifier achieves a measured peak power-added efficiency(PAE)of 47.2%and a saturated output power(P_(sat))of 25.2 dBm at 44 GHz.The amplifier achieves a P_(sat)higher than 23 dBm and a maximum PAE higher than 25%in the measured bandwidth from 44 GHz to 50 GHz.
基金
Project supported by the National Natural Science Foundation of China(No.62001232)。
