基于柔性掩膜板制备半导体场效应管

Fabrication of semiconductor field effect transistor based on a flexible stencil

为克服传统制备半导体场效应晶体管(FET)过程中存在的材料损伤、对准精度受限、电极转移难度大和成本高昂等缺陷,提出了一种基于柔性掩膜技术的半导体FET制备方法。利用紫外光刻技术制作柔性掩膜板,直接捞取并加热蒸干固定掩膜板,采用离子束溅射法沉积金属,并通过将半导体CdSe纳米带转移到电极上,获得了N沟道耗尽型FET,证实了器件的功能性和此方法的可行性。此技术成本低廉,且材料损伤小,为制备集成半导体器件提供了一种新的思路。

In order to overcome the problems of traditional fabrication of semiconductor field effect transistors(FET),such as material damage,limited alignment accuracy,the difficulty of transferring the electrode and high cost,a fabrication technique of semiconductor FET based on a flexible stencil technology was proposed.Ultra-violet lithography technology can be used to fabricate the flexible stencil.Then,the stencil was directly scooped up,heated and dried.The metal was deposited by ion beam sputtering technique,and N-channel depletion FET was obtained by transferring semiconductor CdSe nanobelts to the electrode,which confirmed the functionality and the feasibility of this technique.The technique has low cost and low material damage,and it provides a new way to fabricate integrated semiconductor devices.