浅析多晶硅杂质引入因素及解决方案

Analysis of Impurity Introduction Factors and Solutions in Polysilicon

如何进一步降低卤硅烷中杂质含量,使国内多晶硅的质量达到国外电子级水平一直是行业关注的话题。本文首先阐述了改良西门子法生产多晶硅流程中杂质的主要来源,其次概述了近些年国内外关于痕量硼、磷等杂质高效去除的技术方案,着重探索了络合法、吸附法、部分水解法等杂质去除机理;最后提出了电子级多晶硅国产化进程中应侧重的提纯技术研究方向。

Reducing the impurities of halogenosilane to reach the level of electronic-grade polysilicon produced abroad is one of the most concerned topics in industry. This review firstly introduces the primary sources of impurities during the production process via the Siemens method, then generalizes some recently reported technological strategies for efficiently removing the trace of boron and phosphorus impurities. Additionally, the mechanisms of impurity removal technologies, such as complexation, adsorption, partial hydrolysis have been explored and presented e mphatically.Finally, research perspective of purification technologies is expected in the process of localization of electronic polysilicon.