基于示差脉冲伏安法检测高纯铟电解液中铟离子

Detection of indium ion in high-purity indium electrolyte based on differential pulse voltammetry

采用恒电位沉积法在玻碳电极上制备原位铋膜电极,利用循环伏安法、电化学交流阻抗探究玻碳电极和原位铋膜电极表面的电化学行为。对缓冲液pH、铋离子浓度、富集时间及电位等实验条件进行优化,利用示差脉冲伏安法实现高纯铟电解液中铟离子(In^(3+))的检测,In^(3+)的溶出峰电流值和其浓度在0.6~2 mg/L范围呈线性关系,线性方程为c=0.061I+0.093,相关系数(R^(2))为0.998。在NaCl和明胶存在下,该方法仍能够有效地检测高纯铟电解液中In^(3+)浓度。

In-situ bismuth film electrode was prepared on the glassy carbon electrode by potentiostatic deposition.Cyclic voltammetry and electrochemical impedance spectroscopy were used to investigate the electrochemical behavior of glassy carbon electrode and in-situ bismuth film electrode.By optimizing the experimental conditions of buffer pH,bismuth ion concentration,enrichment time and potential,differential pulse voltammetry was used to detect In^(3+)in high-purity indium electrolyte,and the dissolution of In^(3+)was obtained.The linear relationship range between the peak current value and its concentration was from 0.6 to 2 mg/L,and the calibration equation was c=0.06I+0.093,with the correlation coefficient(R^(2))of 0.998.In addition,the In^(3+)concentration in the high-purity indium electrolyte can still be detected effectively in the presence of NaCl and gelatin.