ZnTe纳米材料的合成方法及性能研究进展

Progress in synthesis and properties of zinc telluride nanomaterials

ZnTe宽带隙半导体由于具有高的光学透明度、低电子亲和力和易于掺杂,目前在光电设备和光催化领域应用具有广泛的应用。大量研究表明,材料纳米化可以突破体相材料的应用限制,开发出更多优越的物理化学性能。然而,简单且可控的制备出结构稳定、尺寸均一的ZnTe纳米材料是这一材料进一步应用的技术前提。介绍了通过热蒸发、分子束外延、磁控溅射、水热/溶剂热、密闭空间升华和化学气相沉积等合成ZnTe纳米材料的方法,讨论了不同形貌的ZnTe纳米材料在各种领域的应用。

ZnTe wide-bandgap semiconductors are currently widely used in the field of optoelectronic devices and photocatalysis due to their high optical transparency, low electron affinity and ease of doping.Numerous studies have shown that nanosizing materials can break through the application limitations of bulk phase materials and develop more superior physicochemical properties.However, the simple and controlled preparation of structurally stable and dimensionally homogeneous ZnTe nanomaterials is a technical prerequisite for the further application of this material.Therefore, this review presented the synthesis of ZnTe nanomaterials by thermal evaporation, molecular beam epitaxy, magnetron sputtering, hydrothermal/solvothermal methods, confined space sublimation, chemical vapor deposition and other methods.Here the application of ZnTe nanomaterials with different morphologies were also discussed in various fields.