摘要
在研究SiC MOSFET的阈值电压、体二极管电压、漏-源极通态电阻温度依赖性的基础上,分析偏压温度不稳定性(BTI)引起的V_(TH)的漂移规律,并探究其对温敏电参数(TSEPs)的影响规律。另外,在充分考虑温度和BTI对V_(TH)共同作用的影响下,提出在小电流注入时使用体效应下的体二极管电压监测SiC MOSFET阈值电压的方法。该方法可在不同的结温(T_(j))下监测阈值电压,为校正其他TSEPs测量结温的准确性提供帮助。理论和实验结果证明了该方法的可行性。
This paper studies the temperature dependence of threshold voltage,body diode voltage,drain-source on-state resistance in SiC MOSFET,analyzes the effect of bias temperature instability(BTI)on V_(TH),and explores the mechanism of its effect on temperaturesensitive electrical parameters(TSEPs). In addition,considering the influence of temperature and BTI on V_(TH),a method for threshold voltage monitoring employing SiC MOSFET body diode voltage under body effect at low current injection is proposed. The proposed method can monitor the threshold voltage at different junction temperatures( T_(j))and provides help for correcting the accuracy of junction temperature measurement by other TSEPs. The theoretical and experimental results demonstrate the feasibility of the proposed method.
作者
杜明星
信金蕾
姚婉荣
欧阳紫威
Du Mingxing;Xin Jinlei;Yao Wanrong;Ouyang Ziwei(Tianjin Key Laboratory of Control Theory&Applications in Complicated System,Tianjin University of Technology,Tianjin 300384,China;Tianjin Zhongke Huaying Technology Co.,Ltd.,Tianjin 300300,China;Department of Electrical Engineering,Technical University of Denmark,Lyngby 2800 Kgs,Denmark)
出处
《太阳能学报》
EI
CAS
CSCD
北大核心
2023年第2期445-452,共8页
Acta Energiae Solaris Sinica
基金
天津市技术创新引导专项(基金)(20YDTPJC00510)。
关键词
碳化硅
功率MOSFET
状态监测
温敏电参数
偏压温度不稳定性
silicon carbide
power MOSFET
condition monitoring
temperature-sensitive electrical parameters
bias temperature instability
