半导体封装Cu-Cu互连接头烧结性能研究

Study on Sintering Properties of Cu-Cu Interconnect Joint in Semiconductor Package

使用不添加任何助焊剂的铜膏,获得了高烧结性能的Cu-Cu互连接头。使用扫描电子显微镜、X射线衍射仪和热重分析仪对粒径分别为(20±10)nm、(80±20)nm和(100±20)nm的纳米铜颗粒进行分析表征。选择粒径为(80±20)nm的纳米铜颗粒和松油醇混合配成纳米铜膏,用于互连接头的烧结性能研究。探究了不同的烧结温度、保温时间、升温速率和烧结压力对互连接头的剪切强度和失效面微观形貌的影响,得出了最佳的工艺参数。在升温速率为0.1℃/s、保温时间为30 min、烧结温度为260℃和无压条件下烧结,互连接头的剪切强度达到了5.0 MPa。在同样的升温速率和保温时间、烧结温度为300℃、压力为5 MPa的条件下烧结,互连接头的剪切强度达到了33.3 MPa。Cu-Cu互连接头能够满足功率半导体器件的互连应用要求。

Cu-Cu interconnection joints with high sintering properties are obtained by using copper paste without adding any flux.Scanning electron microscope,X-ray diffractometer and thermogravimetric analysis are used to analyze and characterize copper nanoparticles with particle size of(20±10)nm,(80±20)nm and(100±20)nm respectively.Copper nanoparticles with particle size of(80±20)nm are mixed with terpineol to prepare paste for the study of sintering properties of interconnection joints.The effects of different sintering temperature,holding time,heating rate and sintering pressure on the shear strength and failure surface morphology of interconnection joints are investigated,and the optimal process parameters are obtained.Under the conditions of 0.1℃/s heating rate,30 min holding time,260℃sintering temperature and no pressure,the shear strength of the interconnection joint can reach 5.0 MPa.At the same heating rate and holding time,the shear strength of the interconnection joint can reach 33.3 MPa at the sintering temperature of 300℃and pressure of 5MPa.Cu-Cu interconnection joint can meet the interconnection application requirements of power semiconductor devices.