GaN HEMT器件背面减薄工艺研究

Study on Backside Thinning Process of GaN HEMT Devices

阐述GaN HEMT器件背面工艺的步骤以及背面减薄的特点,针对减薄工艺所需的技术支持需求提出临时键合工艺,探讨临时键合工艺中的问题,优化工艺步骤,提出解决方法,采用粗磨加多步精磨的方法得到50μm厚度的超薄晶圆,验证减薄的可行性。

This paper describes the steps of GaN HEMT backside process and the importance of backside thinning. The temporary bonding process was proposed according to the requirements of mechanical support required by the thinning process. The frequent problems in the temporary bonding process were analyzed, and the solutions were proposed after optimizing the process steps. Finally, the ultra-thin wafer with a thickness of 50um was obtained by the method of coarse grinding and multi-step fine grinding, and the feasibility of thinning was verified.