AlGaN-GaN和GaN上的低能Si离子注入工艺

Analysis of Low-energy Si Ion Implantation Process on AlGaN-GaN and GaN

阐述GaN注入掺杂的激活退火一直受到GaN高温分解现象的制约,高温退火的目的是恢复注入造成的晶格损伤,激活注入的原子替代晶格原子。由于在注入过程中提高衬底温度已被证明可有效减少晶格损伤并有助于提高其他半导体材料的激活效率,探讨将这种方法应用于AlGaN/GaN和GaN中的Si离子注入。仿真和实验在Al0.25Ga0.75N/GaN和GaN样品结构中,进行Si离子注入,分析实验结果。

This paper describes that the activation annealing of GaN implantation doping has been restricted by the high temperature decomposition of GaN. The purpose of high temperature annealing is to recover the lattice damage caused by implantation and activate the implanted atoms to replace the lattice atoms. Since increasing the substrate temperature during the implantation process has been proved to be effective in reducing lattice damage and helping to improve the activation efficiency of other semiconductor materials, it is discussed to apply this method to Si ion implantation in AlGaN/GaN and GaN. Simulation and experiment In Al0.25Ga0.75N/GaN and GaN sample structures, Si ion implantation was carried out, and the experimental results were analyzed.