摘要
外部激励施加于薄膜体声波谐振器(FBAR)时会激发纵向与横向剪切的振动,引发能量损耗,为了减少寄生谐振,降低FBAR器件的工作损耗,提高器件的品质因数,故需要抑制横向剪切振动。该文采用有限元仿真法讨论了顶电极边缘负载参数对FBAR器件横向寄生的影响,并通过COMSOL仿真软件实现且制备了结构完整的谐振器。测试结果表明,负载结构可有效提升器件品质因数约10%。
When the external excitation is applied to the thin film bulk acoustic resonator(FBAR),the longitudinal and transverse shear vibration will be excited,resulting in energy loss.In order to reduce parasitic resonance,reduce the working loss of FBAR device and improve the quality factor of the device,it is necessary to suppress the transverse shear vibration.In this paper,the influence of the top electrode edge load parameters on the transverse parasitics of FBAR device is investigated by using the finite element simulation and implemented by the COMSOL simulation software,and the resonator with complete structure is prepared.It is tested that the load structure can effectively improve the quality factor of the device by about 10%.
作者
刘红斌
张铁林
胡晗
衣新燕
李国强
LIU Hongbin;ZHANG Tielin;HU Han;YI Xinyan;LI Guoqiang(State Key Laboratory of Luminescent Materials and Devices,South China University of Technology,Guangzhou 510640,China;The Guangzhou Aifo Light Communication Technology Co.,Ltd,Guangzhou 510700,China)
出处
《压电与声光》
CAS
北大核心
2023年第1期21-25,44,共6页
Piezoelectrics & Acoustooptics
基金
广东省重点领域研发计划基金资助项目(No.2019B010129001)。
