摘要
This paper studied the low-resistance ohmic contacts on InAlN/GaN with metal–organic chemical vapor deposition(MOCVD)regrowth technique.The 150-nm regrown n-InGaN exhibits a low sheet resistance of 31Ω/□,resulting in an extremely low contact resistance of 0.102Ω·mm between n^(+)-InGaN and InAlN/GaN channels.Mask-free regrowth process was also used to significantly improve the sheet resistance of InAlN/GaN with MOCVD regrown ohmic contacts.Then,the diffusion mechanism between n^(+)-InGaN and InAlN during regrowth process was investigated with electrical and structural characterizations,which could benefit the further process optimization.
作者
郭静姝
祝杰杰
刘思雨
刘捷龙
徐佳豪
陈伟伟
周雨威
赵旭
宓珉瀚
杨眉
马晓华
郝跃
Jingshu Guo;Jiejie Zhu;Siyu Liu;Jielong Liu;Jiahao Xu;Weiwei Chen;Yuwei Zhou;Xu Zhao;Minhan Mi;Mei Yang;Xiaohua Ma;Yue Hao(School of Microelectronics,Xidian University,Xi'an 710071,China;The National Key Discipline Laboratory of Wide Bandgap Semiconductor,Xidian University,Xi'an 710071,China;School of Advanced Materials and Nanotechnology,Xidian University,Xi'an 710071,China;China Academy of Space Technology(Xi'an),Xi'an 710100,China)
基金
the Fundamental Research Funds for the National Key Research and Development Project of China(Grant No.2020YFB1807403)
the National Natural Science Foundation of China(Grant Nos.62174125 and 62131014)
the Fundamental Research Funds for the Central Universities(Grant Nos.QTZX22022 and YJS2213)
the Innovation Fund of Xidian University.
