摘要
We report the synthesis and characterization of a Si-based ternary semiconductor Mg_(3)Si_(2)Te_(6),which exhibits a quasitwo-dimensional structure,where the trigonal Mg_(3)Si_(2)Te_(6)layers are separated by Mg ions.Ultraviolet-visible absorption spectroscopy and density functional theory calculations were performed to investigate the electronic structure.The experimentally determined direct band gap is 1.39 eV,consistent with the value of the density function theory calculations.Our results reveal that Mg_(3)Si_(2)Te_(6)is a direct gap semiconductor,which is a potential candidate for near-infrared optoelectronic devices.
作者
黄潮欣
程本源
张云蔚
姜隆
李历斯
霍梦五
刘晖
黄星
梁飞翔
陈岚
孙华蕾
王猛
Chaoxin Huang;Benyuan Cheng;Yunwei Zhang;Long Jiang;Lisi Li;Mengwu Huo;Hui Liu;Xing Huang;Feixiang Liang;Lan Chen;Hualei Sun;Meng Wang(Center for Neutron Science and Technology,Guangdong Provincial Key Laboratory of Magnetoelectric Physics and Devices,School of Physics,Sun Yat-Sen University,Guangzhou 510275,China;Shanghai Institute of Laser Plasma,Shanghai 201800,China;Center for High Pressure Science and Technology Advanced Research,Shanghai 201203,China;Instrumentation Analysis and Research Center,Sun Yat-Sen UniVersity,Guangzhou 510275,China)
基金
the National Natural Science Foundation of China(Grant Nos.12174454,11904414,11904416,and 12104427)
the Guangdong Basic and Applied Basic Research Foundation,China(Grant No.2021B1515120015)
the Guangzhou Basic and Applied Basic Research Foundation(Grant No.202201011123)
the National Key Research and Development Program of China(Grant No.2019YFA0705702).
