摘要
High performance short-wavelength infrared PBn photodetectors based on InAs/GaSb/AlSb superlattices on GaSb substrate have been demonstrated.At 300 K,the device exhibits a 50%cut-off wavelength of~2.1μm as predicted from the band structure calculation;the device responsivity peaks at 0.85 A/W,corresponding to a quantum efficiency(QE)of 56%for 2.0μm-thick absorption region.The dark current density of 1.03×10^(-3)A/cm^(2)is obtained under 50 mV applied bias.The device exhibits a saturated dark current shot noise limited specific detectivity(D*)of 3.29×1010cm·Hz^(1/2)/W(at a peak responsivity of 2.0μm)under-50 mV applied bias.
作者
蒋俊锴
常发冉
周文广
李农
陈伟强
蒋洞微
郝宏玥
王国伟
吴东海
徐应强
牛智川
Junkai Jiang;Faran Chang;Wenguang Zhou;Nong Li;Weiqiang Chen;Dongwei Jiang;Hongyue Hao;Guowei Wang;Donghai Wu;Yingqiang Xu;Zhi-Chuan Niu(State Key Laboratory for Superlattices and Microstructures,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China;College of Materials Science and Opto-Electronic Technology,University of Chinese Academy of Sciences,Beijing 101408,China;Center of Materials Science and Optoelectronics Engineering,College of Materials Science and Opto-Electronic Technology,University of Chinese Academy of Sciences,Beijing 100049,China)
基金
the National Key Technologies R&D Program of China(Grant Nos.2019YFA0705203 and 2018YFA0209104)
Major Program of the National Natural Science Foundation of China(Grant No.61790581)
Aeronautical Science Foundation of China(Grant No.20182436004).
