摘要
基于功率半导体表面造形技术的理论基础,详细分析了大功率高电压硅二极管表面成形工艺中的斜角形成,表面腐蚀,表面清洁处理和表面钝化的关键技术,通过多种实验的方法,得出伏安特性的结论以及今后工艺改进的方向。
Based on the theoretical basis of power semiconductor surface shaping technology,the key technologies of bevel formation,surface etching,surface cleaning and surface passivation in the forming process of high-power and high-voltage silicon diode are analyzed in detail,the conclusion of volt-ampere characteristics and the direction of technological improvement in the future are obtained by various experiment methods.
作者
高山城
赖桂森
谢永泉
邵珠柯
GAO Shan-cheng;LAI Gui-sen;XIE Yong-quan;SHAO Zhu-ke(Xi'an PERI Power Semiconductor Converting Technology Co.,Ltd.,Xi'an 710077,China;不详)
出处
《电力电子技术》
北大核心
2023年第3期131-134,共4页
Power Electronics
关键词
硅二极管
表面腐蚀
表面清洁
表面钝化
silicon diode
surface etching
surface cleaning
surface passivation