功率半导体器件表面工艺机理研究

Study on the Surface Process Mechanism of Power Semiconductor Devices

基于功率半导体表面造形技术的理论基础,详细分析了大功率高电压硅二极管表面成形工艺中的斜角形成,表面腐蚀,表面清洁处理和表面钝化的关键技术,通过多种实验的方法,得出伏安特性的结论以及今后工艺改进的方向。

Based on the theoretical basis of power semiconductor surface shaping technology,the key technologies of bevel formation,surface etching,surface cleaning and surface passivation in the forming process of high-power and high-voltage silicon diode are analyzed in detail,the conclusion of volt-ampere characteristics and the direction of technological improvement in the future are obtained by various experiment methods.