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基于第三代半导体的国家关键基础设施电磁防护研究

Research on Electromagnetic Protection of National Key Infrastructure Based on the Third Generation Semiconductor
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摘要 当前电磁环境趋于复杂,国家关键基础设施的电磁防护已经越发迫切。针对此问题,提出采用第三代半导体进行前门和后门防护的对策。通过列举第三代半导体的发展,论证将其应用于电磁防护中的可行性和先进性。针对不同关键基础设施,分别论证第三代半导体在特定系统中的应用部位和防护方式。论述表明,第三代半导体在国家关键基础设施防范重大电磁威胁中堪当大任。 At present,the electromagnetic environment tends to be complex,and the electromagnetic protection of national key infrastructure has become more and more urgent.To solve this problem,third-generation semiconductor is used to protect the front door and back door.By enumerating the development of third-generation semiconductor,the feasibility and advancement of its application in electromagnetic protection are demonstrated.According to different critical infrastructure,the application position and protection mode of third-generation semiconductor in the specific system are demonstrated respectively.Thus,the third generation of semiconductors can play an important role in preventing major electromagnetic threats to the nation’s critical infrastructure.
作者 邓世雄 高长征 DENG Shixiong;GAO Changzheng(The 13th Research Institute of China Electronics Technology Group Corporation,Shijiazhuang 050051,China)
出处 《电声技术》 2022年第11期111-113,共3页 Audio Engineering
关键词 基础设施 第三代半导体 电磁防护 infrastructure third-generation semiconductor electromagnetic protection
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