碳化硅晶片的超精密抛光工艺

Ultra-Precision Polishing in Silicon Carbide Wafer

使用化学机械抛光(CMP)方法对碳化硅晶片进行了超精密抛光试验,探究了滴液速率、抛光头转速、抛光压力、抛光时长及晶片吸附方式等工艺参数对晶片表面粗糙度的影响,并对工艺参数进行了优化,最终得到了表面粗糙度低于0.1 nm的原子级光滑碳化硅晶片。

Chemical mechanical polishing(CMP)method is used to carry out ultra-precision polishing experiments on silicon carbide wafer.The effects of process parameters such as drop rate,polishing head rotating speed,polishing pressure,polishing time and wafer mounting mode on the surface roughness of wafer are explored,the process parameters are optimized.Finally,atomic-level ultra-smooth silicon carbide wafer with surface roughness less than 0.1 nm is obtained.