摘要
采用溶剂热法-旋涂法构建了Sb_(2)O_(3)/BiVO_(4)/WO_(3)半导体异质结,并采用X射线衍射、扫描电子显微镜、X射线光电子能谱等手段表征了其物化性质。在1.23 V(vs RHE)电位下,BiVO_(4)/WO_(3)的光电流密度相对于BiVO_(4)提高了2倍。进一步复合Sb_(2)O_(3)之后,虽然Sb_(2)O_(3)/BiVO_(4)/WO_(3)薄膜的光电流密度有所下降,但其光电催化产H_(2)O_(2)的法拉第效率和产生速率得到明显提升。在1.89 V(vs RHE)电位下,3c-Sb_(2)O_(3)/BiVO_(4)/WO_(3)薄膜产H_(2)O_(2)的法拉第效率提高到约19%;1c-Sb_(2)O_(3)/BiVO_(4)/WO_(3)薄膜H_(2)O_(2)产生速率从约2.1μmol·h-1·cm^(-2)提高到约3.6μmol·h-1·cm^(-2)。此外,Sb_(2)O_(3)的复合显著提高了BiVO_(4)/WO_(3)电极材料的光电催化稳定性。
Sb_(2)O_(3)/BiVO_(4)/WO_(3) semiconductor heterojunctions were constructed by solvothermal method and spin coating method,and X-ray diffraction,scanning electron microscopy,and X-ray photoelectron spectroscopy were used to characterize the physical and chemical properties.The photocurrent density of BiVO_(4)/WO_(3) was increased by two times compared with BiVO_(4) at 1.23 V(vs RHE).Although further coating with Sb_(2)O_(3) decreased the photocurrent density of Sb_(2)O_(3)/BiVO_(4)/WO_(3) film,the Faraday efficiency and production rate of H_(2)O_(2) were improved.At 1.89 V(vs RHE),the Faraday efficiency of 3c-Sb_(2)O_(3)/BiVO_(4)/WO_(3) film was enhanced to ca.19%;the production rate of H_(2)O_(2) of 1c-Sb_(2)O_(3)/BiVO_(4)/WO_(3) film increased from ca.2.1 to ca.3.6μmol·h-1·cm^(-2).In addition,the coating of Sb_(2)O_(3) significantly improved the photoelectrocatalytic stability of BiVO_(4)/WO_(3) electrode.
作者
谢银琼
唐诗
王珊珊
连欣
郭文龙
刘玺
XIE Yin-Qiong;TANG Shi;WANG Shan-Shan;LIAN Xin;GUO Wen-Long;LIU Xi(Chongqing Key Laboratory of Green Synthesis and Applications,College of Chemistry,Chongqing Normal University,Chongqing 401331,China;College of Chemistry and Chemical Engineering,Chongqing University of Science and Technology,Chongqing 401331,China)
出处
《无机化学学报》
SCIE
CAS
CSCD
北大核心
2023年第3期433-442,共10页
Chinese Journal of Inorganic Chemistry
基金
重庆市自然科学基金(No.cstc2020jcyjmsxmX0735)
重庆市教委基金项目(No.KJQN202101517)资助。
