星载高可靠性Ku波段GaN功率放大器芯片

Spaceborne High Reliability Ku-band GaN Power Amplifier MMIC

基于星载高可靠性的应用背景,采用0.20μm GaN HEMT工艺研制了一款12 V工作电压的Ku频段功率放大器芯片。利用电热结合的分析方法,确定了管芯结构及工作电压。基于Load-pull测试获得GaN HEMT管芯的最佳输出功率和最佳效率阻抗,设计了一种带谐波匹配的高效率输出匹配电路,并通过引入有耗匹配,研制出了低压稳定的级间匹配电路。芯片面积为2.8 mm×2.6 mm,管芯漏极动态电压仿真峰值低于30 V,实测结温小于80℃,满足宇航Ⅰ级降额要求。功率放大器在17.5~18.0 GHz、漏压12 V(连续波)条件下,典型饱和输出功率2.5 W,附加效率38%,功率增益大于20 dB,线性增益大于27 dB,满足星载高效率要求。

Based on the background of spaceborne high reliability,a Ku-band power amplifier MMIC working at 12 V operating voltage was presented,which was fabricated by 0.20μm GaN HEMT technology.The structure and operating voltage of the GaN HEMT were determined by the analysis method of thermoelectric combination.Based on the optimum power impedance and optimum efficiency impedance,which obtained by load-pull system,a high PAE output matching circuit with harmonic suppression was designed.And a low-voltage stable inter-stage matching circuit was designed by introducing loss-matching.The MMIC size is 2.8 mm×2.6 mm.The simulated RF voltage of drain is less than 30 V and the measured junction temperature is less than 80℃,which can meet the requirements of aerospace classⅠderating.The typical saturated output power is 2.5 W,the power added efficiency is greater than 38%,the power gain is greater than 20 dB and the linear gain is greater than 27 dB under the condition of 17.5-18.0 GHz and 12 V(CW)drain bias.