摘要
三维(3D)狄拉克半金属因其独特的拓扑能带结构及优异的光电性能在中/远红外波段的宽光谱光电探测领域具有巨大的应用潜力.然而,由于较大的暗电流,构建具有高信噪比(SNR)的3D狄拉克半金属宽光谱光电探测器仍面临很大挑战.本工作基于分子束外延生长的(Cd_(1-x)Zn_(x))_(3)As_(2)薄膜发展了一种超低器件噪声的3 D狄拉克半金属(Cd_(1-x)Zn_(x))_(3)As_(2)/Sb_(2)Se_(3)背靠背异质结光电探测器线阵.得益于有效的双异质结设计策略,该探测器可以实现从可见光(450 nm)到中红外(4.5μm)波段的室温高性能宽光谱探测器目标,其峰值SNR和D*分别可达104和5.2×10^(12)Jones,并具有相对较快的响应速度(~87.5μs).此外,不同探测器线列单元之间呈现出的稳定性、均匀性特征表明了其在未来应用于光迹实时跟踪等光电子器件中的可行性.该研究为基于3D狄拉克半金属材料制备具有超高SNR的高速宽光谱光电探测器提供了参考策略,展示了半金属在高速非制冷红外焦平面成像阵列探测器中的广阔前景.
Three-dimensional(3D)Dirac semimetal materials have great application prospects in broad-spectrum photodetectors(PDs)working at wavebands up to the mid/far infrared region owing to their unique topological energy-band architectures and excellent photoelectric properties.However,the relatively high dark current in most Dirac semimetalbased PDs limits their photodetection performance,with poor signal-to-noise ratios(SNRs).Herein,we developed an ultralow-noise-level PD linear array based on a 3D Dirac semimetal(Cd_(1-x)Znx)_(3)As_(2)/Sb_(2)Se_(3)back-to-back(BTB)heterojunction using a molecular beam epitaxy(MBE)-grown(Cd_(1-x)Zn_(x))_(3)As_(2)film.Benefiting from the effective double-heterojunction design strategy,the as-fabricated(Cd_(1-x)Zn_(x))_(3)As_(2)/Sb_(2)Se_(3)lineararray PD exhibited an outstanding photodetection capacity from the visible to mid-infrared region(450 nm to 4.5μm),with the highest recorded SNR close to 10~4,excellent peak specific detectivity of 5.2×10^(12)Jones,and high response speed of about 87.5μs at room temperature.Furthermore,the PD exhibited long-term stability and uniformity as only minor photocurrent fluctuations occurred among different PD linear-array units demonstrating the feasibility of the PD for advanced optoelectronic applications,such as real-time light trajectory tracking.This work provides a reference strategy for the fabrication of fast-response broadband PDs with ultrahigh SNRs using the 3D Dirac semimetal(Cd_(1-x)Zn_(x))_(3)As_(2)/Sb_(2)Se_(3)BTB heterojunction and demonstrates the great prospect of 3D Dirac semimetal materials for the manufacture of fast-response uncooled focal-plane-array devices.
作者
张兴超
杨运坤
周泓希
刘贤超
潘锐
于贺
苟君
吴志明
巫江
修发贤
施毅
王军
Xingchao Zhang;Yunkun Yang;Hongxi Zhou;Xianchao Liu;Rui Pan;He Yu;Jun Gou;Zhiming Wu;Jiang Wu;Faxian Xiu;Yi Shi;Jun Wang(School of Optoelectronic Science and Engineering,University of Electronic Science and Technology of China,Chengdu 610054,China;State Key Laboratory of Surface Physics and Department of Physics,Fudan University,Shanghai 200433,China;Institute of Optics and Electronics,Chinese Academy of Sciences,Chengdu 610200,China;Institute of Fundamental and Frontier Sciences,University of Electronic Science and Technology of China,Chengdu 610054,China;National Laboratory of Solid-State Microstructures,School of Electronic Science and Engineering,and Collaborative Innovation Center of Advanced Microstructures,Nanjing University,Nanjing 210093,China;State Key Laboratory of Electronic Thin Films and Integrated Devices,University of Electronic Science and Technology of China,Chengdu 610054,China)
基金
supported by the National Natural Science Foundation of China(61922022,62104026,62175026,and 61875031)。
