摘要
由于忆阻器能简化人工伤害系统,其在实现人工伤害感受器中引起越来越多的关注.然而,开发具有生物相容性和可降解的人工伤害感受器仍面临挑战.本文提出基于W/MgO/Mg/W结构的生物相容性、可降解的人工伤害感受器.该器件在弯曲条件下具有稳定单向阈值转变特性,并模拟了阈值、弛豫、不适应、超敏和超痛的伤害感受行为.器件在可降解衬底上的整体可在去离子水中完全溶解,模仿了皮肤坏死分解过程.本工作为开发生物相容性和可降解的人工伤害感受器提供了一条新途径,有望应用于植入式和可穿戴式电子、安全生物集成系统.
As an important receptor located in the skin,a nociceptor is capable of detecting noxious stimuli and sending warning signals to the central nervous system to avoid tissue damage,thus inspiring the development of artificial nociceptors for electronic receptors.Recently,memristors have attracted increasing attention for developing artificial nociceptors due to the simplicity of the artificial nociceptive system.However,the realization of artificial nociceptors with biocompatibility and biodegradability in a single memristive device remains a challenge.Herein,a fully biocompatible and biodegradable threshold switching(TS)memristor consisting of W/MgO/Mg/W configuration was proposed as an artificial nociceptor.The device showed unidirectional TS characteristics with stable electrical performance under bending conditions.Critical nociceptor behaviors,including threshold,relaxation,no adaptation,allodynia,and hyperalgesia,were successfully demonstrated in the memristive nociceptor.Meanwhile,an optoelectronic nociceptor system was built by the integration of a photoresistor and the memristor.Importantly,the devices transferred on a biodegradable polyvinyl acetate substrate as physically transient electronics could completely dissolve in deionized water,simulating the decomposition of skin necrosis.This study provides a novel route toward developing fully biocompatible and biodegradable artificial nociceptors for promising applications in implantable and wearable electronics and secure bio-integrated systems.
作者
曹亚雄
王赛赛
王瑞
辛昱含
彭雅倩
孙静
杨眉
马晓华
吕玲
王宏
郝跃
Yaxiong Cao;Saisai Wang;Rui Wang;Yuhan Xin;Yaqian Peng;Jing Sun;Mei Yang;Xiaohua Ma;Ling Lv;Hong Wang;Yue Hao(Key Laboratory of Wide Band Gap Semiconductor Technology,School of Advanced Materials and Nanotechnology,Xidian University,Xi’an 710071,China;Key Laboratory of Wide Band Gap Semiconductor Technology,School of Microelectronics,Xidian University,Xi’an 710071,China)
基金
financially supported by the National Natural Science Foundation of China(62188102 and 12035019)
the Natural Science Basic Research Program of Shaanxi(2022JQ-582)
the National Key Research and Development Program(2018YFB2202900)。