基于GaN器件的有源箝位双向反激变换器设计

Design of Active Clamp Bidirectional Flyback Converter Based on GaN Transistor

文章针对氮化镓(Gallium Nitride,GaN)功率晶体管在双向DC-DC变换器中的应用进行设计。近年来,第三代宽禁带功率半导体器件GaN凭借其体积小、高频、高效率等优势,在电力电子应用中得到了广泛的关注。为实现双向DC-DC变换器在便携式小功率应用场景下的能量双向高效传输,设计了一种基于GaN器件的有源箝位双向反激变换器并对其性能进行了验证。详细地介绍和分析了变换器的工作原理、开关模态以及软开关实现条件,并对主电路参数进行设计。采用LTspice软件搭建仿真模型,仿真结果验证了该变换器在小功率应用下可实现开关管软开关性能。最后,设计了一个20 W的实验样机验证了所设计拓扑的准确性和有效性,结果表明该变换器较传统Si MOSFET器件具有更高的转换效率。

The application of Gallium Nitride(GaN)power transistor in bidirectional DC-DC converter is designed.In recent years,GaN,the third generation of wide band gap power semiconductor devices,has attracted extensive attention in power electronics applica-tions due to its advantages of small size,high frequency and high efficiency.For the two-way DC-DC converter to achieve bidirectional energy efficient transmission under portable small power application scenarios,an active clamp bi-directional flyback converter based on GaN devices is designed,and its performance is tested.The working principle of the converter,switch mode,and the condition to realize soft switch are introduced in detail and analyzed,and the main circuit parameters are designed.LTspice software is used to build the simulation model,and the simulation results verify that the converter can achieve the performance of soft switching tube under low power application.Finally,a 20 W experimental prototype is designed to verify the accuracy and effectiveness of the designed topology,which has higher conversion efficiency than the traditional Si MOSFET device.