摘要
Semiconductors typically exhibit long-wavelength LSPR absorption in the infrared region due to lower carrier density.Tuning the carrier density of semiconductors and blue-shifting their LSPR absorption to the visible and near-infrared region has always been a great challenge.Herein,we discussed how the controllable carrier of(Ag)x(MoO_(3))y composite influences the LSPR based on SERS test and UVeViseNIR absorption spectra.We were surprised to find that the LSPR absorption wavelength can be easily tuned from 950 to 735 nm by changing the sputtering power of MoO_(3)of the(Ag)x(MoO_(3))_(y)composite.This shows that LSPR can be precisely adjusted by increasing the semiconductor content and even the carrier density.In addition,the carrier density was measured by Hall effect to investigate the SERS intensity change caused by electromagnetic(EM)enhancement,and obtain the relationship between the two.The findings of this work provide an idea for tunable LSPR and the research of EM contributions to SERS.
基金
supported by the National Natural Science Foundation(Grant Nos.22011540378 and 21773080)of P.R.China
The Development Program of the Science and Technology of Jilin Province(20190701003GH,20190201215jc and 20200404193yy).
