量子点红外焦平面读出电路接口研究及选择

Research and selection of readout circuit interface for quantum dotinfrared focal plane arrays

目前InGaAs等材料的短波红外探测器读出电路已经较为成熟,其输入级接口电路也因不同公司和项目需求有着相对成熟的选择,但是在量子点短波红外探测器读出电路输入级接口电路的选择上,现有可查阅的公司及团队也并没有对输入级接口电路的选择进行研究,为了解决量子点探测器与读出电路输入级接口的匹配问题,对量子点探测器所使用的主流读出电路输入级结构进行研究,如CTIA、BDI,通过建立其电路等效模型并进行详细分析,以注入效率为切入点进行公式的研究与推导,将量子点探测器测试所得IV、CV分别结合不同输入级电路结构进行计算及对比,选择出一个更适合量子点探测器的读出电路输入级结构,最终选择CTIA型电路作为量子点短波红外探测器读出电路的输入级接口,其注入效率大于99%。

At present, the readout circuits of short-wave infrared detectors made of InGaAs and other materials are relatively mature, and their input-level interface circuits have relatively mature choices due to the needs of different companies and projects, however, in the selection of input-level interface circuit for qds shortwave infrared detector readout circuit, the available companies and teams have not studied the selection of input-level interface circuit, in order to solve the problem of matching the input-stage interface between the quantum dot detector and the readout circuit, the input-stage structure of the main readout circuit used in the quantum dot detector, such as CTIA, BDI, through the establishment of its equivalent circuit model and detailed analysis of the injection efficiency as the entry point for formula research and derivation, by calculating and comparing the IV and CV obtained from the quantum dot detector with different input-level circuit structures, a more suitable input-level structure of the readout circuit is selected, finally, the CTIA-type circuit is chosen as the input interface of the readout circuit of quantum dots shortwave infrared detector, and its injection efficiency is more than 99%.