L波段1500W GaN功率放大器

L-Band 1500 W GaN Power Amplifier

基于0.5μm GaN高电子迁移率晶体管(HEMT)工艺对GaN芯片结构进行了改进。通过优化场板参数提高击穿电压,通过优化接地孔分布方式降低管芯热阻,设计了单指栅宽1500μm、总栅宽120 mm的改进型GaN HEMT。该芯片具有高击穿电压305 V、低热阻0.19℃/W及高功率密度15 W/mm。采用该GaN HEMT芯片设计了一款L波段功率放大器,采用预匹配技术实现功率放大器高阻抗变换比。经测试,在1.2~1.4 GHz,该功率放大器在栅极电压-1.9 V,漏极电压100 V、脉宽100μs、占空比5%的工作条件下,输出功率大于1500 W,功率增益大于15 dB,功率附加效率大于70%。

The structure of the GaN chip was optimized based on 0.5μm GaN high electron mobility transistor(HEMT)process.The improved GaN HEMT chip with a single finger gate width of 1500μm and a total gate width of 120 mm was designed by optimizing the field plate parameters and the distribution of the grounding holes to increase the breakdown voltage and reduce the thermal resistance of the chip respectively.The chip has a high breakdown voltage of 305 V,a low thermal resistance of 0.19℃/W and a high power density of 15 W/mm.A L-band power amplifier was designed by using the GaN HEMT chip,and the high impedance conversion ratio of the power amplifier was realized by pre-matching technology.The test results show that at 1.2-1.4 GHz,the output power of the amplifier is more than 1500 W,the power gain is more than 15 dB,and the power additional efficiency is more than 70%under the operating conditions of-1.9 V gate voltage,100 V drain voltage with the pulse width of 100μs and duty ratio of 5%.