(100)与(111)晶面硅基金属整片键合后选择性去衬底技术

(100) and(111) Selective De-substrate Technology after Whole-sheet Bonding of Silicon-based Metals

采用硅基金属整片键合后选择性去衬底技术,通过热压键合技术将(100)晶面硅与(111)晶面硅高温键合,利用聚二甲基硅氧烷保护(100)晶面硅衬底,再粗化(111)晶面硅衬底加快其刻蚀速率,后通过湿法选择性刻蚀去除(111)晶面硅衬底。此技术在不损伤硅基驱动芯片的前提下实现了选择性去除硅基氮化镓外延衬底,是一种材料混合集成的新技术,有望应用于自对准硅基Micro-LED微显示器件制程和光电子器件集成领域。

In this paper, the selective substrate removal technology after the silicon-based metal monolithic bonding was used. The(100) crystalline silicon was bonded to(111) crystalline silicon at high temperature by hot-pressure bonding technology. The(100) crystalline silicon substrate was protected by polydimethylsiloxane(PDMS). Then, the(111) crystalline silicon substrate was roughened to accelerate the etching rate. Finally, the(111) crystalline silicon substrate was removed by the wet selective etching. The(111) crystalline silicon substrate of GaN epitaxial substrates was selectively removed with saving the Si-based driver chip. It is a new technology for the mixing and integration of material. It is expected to be applied in the manufacturing process of self-aligned silicon-based micro-LED microdisplay devices and optoelectronic device integration.