磷钨酸衍生Sn掺杂氧化钨纳米材料的制备及气敏性能

Gas sensing performance of Sn-doped WO_(3) nano materials derived by phosphotungstic acid

采用简便的液相离子交换法制备了Sn掺杂磷钨酸,并通过煅烧衍生出Sn掺杂的氧化钨气敏材料.将材料制成MEMS(微机电系统)气体传感器测量了合成材料的气敏性能.测试结果表明,所得材料对硫化氢气体具有良好的选择性,检测限低至1×10^(-6)(体积分数),且在一定的体积浓度范围内具有良好的线性响应.XRD测试证明了Sn元素的成功掺杂,紫外可见漫反射光谱测定了Sn掺杂后带隙的变化,将其应用于讨论Sn掺杂的气敏增强机理.

Sn-doped phosphotungstic acid was prepared by a simple liquid phase ion exchange method,and Sn-doped tungsten metal oxide semiconductor gas sensing materials were derived by calcination.The MEMS gas sensors were made by as-prepared materials for measurement.The results show that the obtained materials have good selectivity for hydrogen sulfide gas,the detection limit is as low as 1×10^(-6)(volume fraction),and has good linear response in a certain concentration range.The successful doping of Sn element was proved by XRD experiment.The change of band gap after Sn doping was measured by UV-Vis diffuse reflection spectrum,and the gas sensing mechanism of the synthetic material was further discussed.