绝缘体上硅功率半导体单芯片集成技术

Study on the Silicon-on-Insulator Power Semiconductor Monolithic Integration Technology

利用单芯片集成技术制造的智能功率芯片具有体积小、寄生小、损耗低等方面的优势,其技术难度远高于传统的多芯片、单封装形式的智能功率模块.本文首先介绍了单片智能功率芯片的架构与技术需求;然后,探讨了绝缘体上硅功率半导体单芯片集成的工艺流程和器件类型;接着,总结了高压横向IGBT器件技术、续流二极管器件技术、LDMOS器件技术的特征和效果;此外,还讨论了单片智能功率芯片的相关可靠性问题,包括高压互连线效应和低温雪崩不稳定.本课题组在功率半导体集成型器件的电流能力、关断速度、短路承受能力、反向恢复峰值电流、安全工作区、高压互连线屏蔽、低温可靠性等关键特性优化或可靠性提升方面进行了自主创新,构建了基于绝缘体上硅的功率半导体单芯片集成技术,并成功研制了单片智能功率芯片.

The intelligent power chip designed and manufactured based on the single-chip integration technology has the advantages of small size,small parasitic element and low loss.Its technical difficulty is much higher than the intelligent power module with multiple co-packaged chips.Firstly,this paper introduces the block diagram of the single-chip intelligent power chip and its technical requirements.Then,the process flow and device types of the silicon-on-insulator(SOI)power semiconductor single-chip integration technology are discussed.Then,the features and technical effect of the highvoltage lateral IGBT,freewheeling diode and LDMOS technologies are summarized.Additionally,the reliability of singlechip intelligent power chip is discussed,including high-voltage interconnection effect and low-temperature instability.The research group of this paper has made independent innovation in the optimization or reliability improvement of key characteristics of integrated power semiconductor devices,such as current capability,turn-off speed,short-circuit withstand capability,reverse recovery peak current,safe operation area,high-voltage interconnection shielding,low-temperature reliability and so on.We developed the power semiconductor single-chip integration technology based on SOI,and realized the localization of single-chip intelligent power chip.