Alleviating Interfacial Recombination of Heterojunction Electron Transport Layer via Oxygen Vacancy Engineering for Efficient Perovskite Solar Cells Over 23%

Electron transport layer(ETL)is pivotal to charge carrier transport for PSCs to reach the Shockley-Queisser limit.This study provides a fundamental understanding of heterojunction electron transport layers(ETLs)at the atomic level for stable and efficient perovskite solar cells(PSCs).The bilayer structure of an ETL composed of SnO_(2) on TiO_(2) was examined,revealing a critical factor limiting its potential to obtain efficient performance.Alteration of oxygen vacancies in the TiO_(2) underlayer via an annealing process is found to induce manipulated band offsets at the interface between the TiO_(2) and SnO_(2) layers.In-depth electronic investigations of the bilayer structure elucidate the importance of the electronic properties at the interface between the TiO_(2) and SnO_(2) layers.The apparent correlation in hysteresis phenomena,including current density-voltage(J-V)curves,appears as a function of the type of band alignment.Density functional theory calculations reveal the intimate relationship between oxygen vacancies,deep trap states,and charge transport efficiency at the interface between the TiO_(2) and SnO_(2) layers.The formation of cascade band alignment via control over the TiO_(2) underlayer enhances device performance and suppresses hysteresis.Optimal performance exhibits a power conversion efficiency(PCE)of 23.45%with an open-circuit voltage(V_(oc))of 1.184 V,showing better device stability under maximum power point tracking compared with a staggered bilayer under one-sun continuous illumination.