基于MOCVD的4H-SiC同质外延缺陷控制方法分析

Analysis of 4H-SiC Homoepitaxial Defect Control Method Based on MOCVD

阐述4H-SiC同质外延生长过程中出现的三角形缺陷。基于三角形缺陷的成核原理,对外延层结构和生长参数进行改进,从而在4H-SiC衬底与外延之间横向生长一层高质量的缓冲层。

This paper describes the triangular defects in the process of 4H-Si C homoepitaxial growth. Based on the nucleation principle of triangular defects, the structure and growth parameters of the epitaxial layer were improved, so that a high-quality buffer layer was grown laterally between the 4H-SiC substrate and the buffer layer.