集成电路中的Ta(N)超薄金属扩散阻挡层研究

Study on Ta(N)Ultrathin Metal Diffusion Barrier Layer in Integrated Circuits

阐述集成电路制造中的布线RC延迟时间、动态性功能损耗和串扰噪音是决定元器件性能的关键因素,Cu/low-x的布线构造可以降低此危害。因为Cu在低x介质中具有较高的扩散率,因而要用扩散阻挡层把它隔开。探讨选择不同加工工艺,制取Ta(n)纤薄金属材料扩散阻挡层,AL基介质扩散阻挡层,设立扩散阻挡层原材料的电子光学特性实体模型。

This paper expounds that the RC delay time of wiring,dynamic function loss and crosstalk noise in integrated circuit manufacturing are the key factors that determine the performance of components.The wiring structure of Cu/low-x can reduce this hazard.Because Cu has a high diffusivity in low x medium,it should be separated by diffusion barrier layer.It discusses how to select different processing technologies to prepare Ta(n)thin metal diffusion barrier layer,AL-based dielectric diffusion barrier layer,and establish the electronic optical characteristic solid model of the diffusion barrier layer raw material.