摘要
InGaN因其可调直接带隙的物理性质被广泛应用于发光器件和太阳能电池领域,高质量生长高In组分InGaN以提高器件性能一直是研究热点。应用第一性原理方法研究了双轴应变对GaN(0001)表面In原子的吸附和扩散的影响。计算结果表明,拉伸应变和压缩应变下,In原子的物理行为发生显著变化并且呈现不同特性。研究结果为深入理解双轴应变对InGaN生长的影响提供了理论基础,并且为高质量生长In Ga N提供理论指导。
InGaN is widely used in optoelectronic devices and solar cells due to its tunable direct band gap,and the high quality growth of high In content InGaN to improve device performance has been a hot research topic.In this paper,the effect of biaxial strain on the adsorption and diffusion of the In atom on the GaN(0001-)surface was investigated by applying the first-principles calculations.The results showed that the physical behaviors of the In atom changed significantly under tensile and compressive strains and exhibited different characteristics.This paper provides a theoretical basis for an in-depth understanding of the effect of biaxial strain on the growth of InGaN and provides theoretical guidance for the high quality growth of InGaN.
作者
张宇
ZHANG Yu(Key Laboratory for Optoelectronics and Communication of Jiangxi Province,Jiangxi Science&Technology Normal University,330038,Nanchang,PRC)
出处
《江西科学》
2023年第2期365-369,共5页
Jiangxi Science
基金
江西省自然科学基金项目(20202ACB202006)。
关键词
氮化镓
双轴应变
吸附
扩散
gallium nitride
biaxial strain
adsorption
diffusion
