超级结MOSFET特性仿真分析

Simulation and Analysis of Characteristics of a Super Junction MOSFET

为实现硅基MOSFET功率器件低导通电阻和高击穿电压的折衷优化,在传统MOSFET漂移区中引入周期性排列的P区和N区,增加垂直分布的PN结结构,设计一种具有1200V耐压的超级结MOSFET。基于对工作原理的分析,使用Silvaco TCAD软件建立结构模型,仿真该器件的电流-电压特性、转移特性以及耐压特性。由仿真结果归纳出所设计超级结MOSFET工作原理,并与传统MOSFET进行对比。实验结果显示该超级结MOSFET在诸多方面均存在优势,为新型硅基功率半导体器件的设计改进提供了新的思路。

In order to realize the compromise optimization of low on-resistance and high breakdown voltage of silicon-based MOSFET power devices,a super junction MOSFET with withstand voltage 1200 V is designed by introducing periodically arranged P region and N region into the drift region of traditional MOSFET and increasing the vertically distributed PN junction structure.Based on the analysis of the working principle,the structural model is established by using Silvaco TCAD software to simulate the current-voltage characteristics,transfer characteristics and withstand voltage characteristics of the device.The working principle of the designed super junction MOSFET is summarized from the simulation results,and compared with the traditional MOSFET.The experimental results show that the super junction MOSFET has advantages in many aspects,which provides a new idea for the design improvement of new silicon-based power semiconductor devices.