摘要
The discovery of ferroelectricity in hafnium oxide (HfO_(2)) based thin films in 2011 renewed the interest inferroelectrics. These new ferroelectrics possess completely different crystal morphology with conventional perovskiteferroelectrics, and present more robust ferroelectric properties upon aggressive scaling and compatibility withstandard integrated circuit fabrication processes. In this article, we give a brief introduction to the conventionalferroelectric memories, then review the basic properties, recent progress, and memory applications of theseHfO_(2)-based ferroelectrics.
基金
This work was supported by the National Key Basic R&D Program of China(Nos.2016YFA0200400 and 2018YFC2001202)
the National Natural Science Foundation of China(Nos.U20A20168,61874065,and 51861145202)
the Research Fund from Tsinghua University Initiative Scientific Research Program,the Beijing Innovation Center for Future Chip,and the Tsinghua-Fuzhou Institute for Date Technology(No.TFIDT2018008).
