铜箔的不同放置方式导致CVD法生长石墨烯的质量差别

The Placement of Copper Foil Results in the Quality Difference of Graphene Grown by CVD Method

铜箔上石墨烯的表面洁净度会直接影响样品的质量和导电性。为了制备高质量、少层数、洁净的石墨烯薄膜,首先用长时间高温退火处理提高铜箔表面平整度。然后采用化学气相沉积(CVD)法在三种不同放置方式的铜箔上生长石墨烯,研究发现铜箔竖直放置制备的石墨烯比水平以及倾斜45°放置制得的石墨烯表面更洁净。通过调节CVD炉中通甲烷的时间来制备石墨烯的测试表明,当生长时间为15 min时,水平放置的铜箔上可以生长出高质量的单层石墨烯膜,而倾斜以及竖直放置的铜箔上生长的石墨烯薄膜不完整;生长时间增加至30 min,水平放置铜箔生长的石墨烯的层数会变多,而在倾斜和竖直放置的铜箔上可沉积出单层石墨烯薄膜。经过三种放置方式对比实验发现,竖直放置的铜箔制得的单层石墨烯样品表面清洁度最高,样品的电学性能最优异。

Surface cleanliness of graphene on copper foil will directly affect the quality and conductivity of samples.In order to prepare high-quality,low-layer,and clean graphene films,copper foil is first annealed at a high temperature for a long time,the surface flatness of the copper foil.Graphene was then grown on copper foil in three different placement methods by chemical vapor deposition(CVD).It is found that the surface of graphene placed vertically was cleaner than that of the graphene placed horizontally and tilted 45°.Graphene was also prepared by adjusting the time of passing methane in the CVD furnace.The test shows that when the growth time is 15 minutes,a high-quality single-layer graphene film can grow on copper foil placed horizontally,while an incomplete graphene film can be grown on copper foil placed aslant and vertically.As the growth time increases to 30 minutes,the number of graphene films grown on the copper foil placed horizontally will increase,while a single layer of graphene can be deposited on the copper foil placed tilted and vertically.After three comparative experiments,it is found that the copper foil placed vertically is most conducive to obtaining single layer graphene with a clean surface,and the electrical properties of the sample are the best among them.