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PVP与TAZ复配对Cu CMP的吸附缓蚀 被引量:2

Adsorption and Corrosion Inhibition of Cu CMP by the Combination of PVP and TAZ
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摘要 采用电化学方法、表面表征和量子化学计算研究了在碱性抛光液中聚乙烯吡咯烷酮(PVP)与1,2,4-三氮唑(TAZ)复配对Cu表面的缓蚀性能,探讨了原子尺度的吸附缓蚀机理。研究表明,PVP与TAZ复配较单独使用具有更好的缓蚀性能,且吸附方式均服从Langmuir吸附等温模型;PVP的反应活性位点主要集中在含有甲基的一端且能量较低,TAZ分子环上氮原子均为反应活性位点且能量很高,均可与Cu原子配位形成吸附中心,从而达到良好的缓蚀效果。PVP与TAZ复配可实现Cu化学机械抛光(CMP)在高去除速率下的低表面粗糙度。 The corrosion inhibition performance of the combination of polyethylene pyrrolidone(PVP)and 1,2,4-triazole(TAZ)on Cu surface in alkaline polishing solution was studied by electrochemical method,surface characterization and quantum chemical calculation,and the adsorption and corrosion inhibition mechanism in atomic scale was discussed.The results show that the combination of PVP and TAZ has better corrosion inhibition performance than that of single use,and the adsorption mode follows the Langmuir adsorption isotherm model.The reactive active sites of PVP are mainly concentrated at the end containing methyl group and have low energy.The nitrogen atoms on the TAZ molecular ring are reactive active sites and have high energy.They can coordinate with Cu atoms to form adsorption centers,thus achieving good corrosion inhibition effect.The combination of PVP and TAZ can achieve low surface roughness under high removal rate of Cu chemical mechanical polishing(CMP).
作者 马忠臣 孙鸣 李梦琦 杨雪妍 齐美玲 Ma Zhongchen;Sun Ming;Li Mengqi;Yang Xueyan;Qi Meiling(School of Electronic and Information Engineering,Hebei University of Technology,Tianjin 300130,China;Tianjin Key Laboratory of Electronic Materials and Devices,Tianjin 300130,China)
出处 《半导体技术》 CAS 北大核心 2023年第4期308-317,共10页 Semiconductor Technology
基金 国家科技重大专项资助项目(2016ZX02301003-004-007) 国家自然科学基金资助项目(61504037)。
关键词 复配缓蚀剂 粗糙度 去除速率 吸附 化学机械抛光(CMP) 密度泛函理论 compound corrosion inhibitor roughness removal rate adsorption chemical mechanical polishing(CMP) density functional theory
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