摘要
The variations of single event transient(SET)pulse width of high-LET heavy ion irradiation in 16-nm-thick bulk silicon fin field-effect transistor(Fin FET)inverter chains with different driven strengths are measured at different temperatures.Three-dimensional(3D)technology computer-aided design simulations are carried out to study the SET pulse width and saturation current varying with temperature.Experimental and simulation results indicate that the increase in temperature will enhance the parasitic bipolar effect of bulk Fin FET technology,resulting in the increase of SET pulse width.On the other hand,the increase of inverter driven strength will change the layout topology,which has a complex influence on the SET temperature effects of Fin FET inverter chains.The experimental and simulation results show that the device with the strongest driven strength has the least dependence on temperature.
作者
蔡莉
池雅庆
叶兵
刘郁竹
贺泽
王海滨
孙乾
孙瑞琪
高帅
胡培培
闫晓宇
李宗臻
刘杰
Li Cai;Ya-Qing Chi;Bing Ye;Yu-Zhu Liu;Ze He;Hai-Bin Wang;Qian Sun;Rui-Qi Sun;Shuai Gao;Pei-Pei Hu;Xiao-Yu Yan;Zong-Zhen Li;Jie Liu(Institute of Modern Physics,Chinese Academy of Sciences,Lanzhou 730000,China;University of Chinese Academy of Sciences,Beijing 100049,China;College of Computer Science,National University of Defense Technology,Changsha 410073,China;College of IoT Engineering,Hohai University,Changzhou 213022,China)
基金
Project supported by the National Natural Science Foundation of China(Grant Nos.12035019,12105339,and62174180)
the Opening Special Foundation of State Key Laboratory of Intense Pulsed Radiation Simulation and Effect,China(Grant No.SKLIPR2113)。
